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We derive the cross section for the intensity of diffuse x-ray scattering under conditions of grazing incidence and exit in the vicinity of Bragg reflections induced by near-surface defects. The theoretical results for a simple model are compared with first measurements on Si single crystals implanted with 80-keV As ions. Reasonable agreement is obtained for a profile of a defect distribution corresponding to that of the collision energy deposited by the implanted ions

Diffuse scattering of x rays at grazing angles from near-surface defects in crystals