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Evidence for an energy reference level based on substitutional transition-metal defect levels in semiconductors is presented and used to obtain the values for the band-edge hydrostatic deformation potentials in silicon. From the pressure derivatives of Pt and Pd acceptors in silicon we derive values of ..gamma../sub d/ = -0.5 eV and a/sub v/ = +0.9 eV. These values are consistent with recent theoretical calculations and with the analysis of acoustic-phonon-limited electron and hole mobility.

Deep-level defects in silicon and the band-edge hydrostatic deformation potentials