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The development of high-power infrared (ir) lasers has stimulated the study of the interaction of intense radiation with atoms, ' plasmas, ' and solids. ' " In particular, in the case of solids, considerable effort has been devoted to the theoretical and experimental aspects of the multiphonon spectroscopy, ' treating the disturbing ir laser as a perturbation. Of the "nonperturbative" methods (i.e., treatments which do not consider the ir laser as a perturbation), the most well-known work is the one carried out by Keldysh" almost two decades ago. More recently, Jones and gneiss" have proposed another nonperturbative method based upon the description of the band states in the presence of the laser field by a Volkov-type wave function. ' In this paper, we address ourselves to the investigation of the changes induced in the absorption coefficient of light of a direct-gap semiconductor due to the simultaneous irradiation of the sample by an ir laser of arbitrary intensity. Specifically, in what follows, we consider the excitation of a valence electron into the conduction band of a direct-band semiconductor by a light beam of frequency 0 and polarization F. This exciting light beam is described by the vector potential the valence band is

Parametric distortion of the optical-absorption coefficient of semiconductors by an additional infrared laser