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Creating heterostructures with graphene/graphite is a practical method forcharge-doping $\alpha$-RuCl$_3$, but not sufficient to cause theinsulator-to-metal transition. In this study, detailed scanning tunnelingmicroscopy/spectroscopy measurements on $\alpha$-RuCl$_3$ with various latticedeformations reveal that both in-plane and out-of-plane lattice distortions maycollapse the Mott-gap in the case of monolayer $\alpha$-RuCl$_3$ in proximityto graphite, but have little impact on its bulk form alone. In the Mott-Hubbardframework, the transition is attributed to the lattice distortion-facilitatedsubstantial modulation of the electron correlation parameter. Observation ofthe orbital textures on a highly compressed monolayer $\alpha$-RuCl$_3$ flakeon graphite provides valuable evidence that electrons are efficientlytransferred from the heterointerface into Cl3$p$ orbitals under the latticedistortion. It is believed that the splitting of Ru $t_{2g}$ bands within thetrigonal distortion of Ru-Cl-Ru octahedra bonds generated the electronstransfer pathways. The increase of the Cl3$p$ states enhance the hoppingintegral in the Mott-Hubbard bands, resulting in the Mott-transition. Thesefindings suggest a new route for implementing the insulator-to-metal transitionupon doping in $\alpha$-RuCl$_3$ by deforming the lattice in addition to theformation of heterostructure.

Insulator-to-metal Mott transition facilitated by lattice deformation in monolayer $\alpha$-RuCl$_3$ on graphite