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Broken spatial inversion symmetry in semiconducting materials withtime-reversal pair valleys can exhibit valley polarization. Based onfirst-principles calculations, here we propose a lateral heterostructure ofkagome lattice of hBN and hexagonal graphene domains that exhibits oppositeBerry curvature in inequivalent K and K' valleys. Explicit consideration ofexcitonic scattering processes within GW and Bethe-Salpeter equation formalismconfirm insignificant intervalley coupling and consequent valley polarizationability along with 0.46 eV higher binding energy of triplet excitons. Suchheterostructure with large charge carrier mobility can be exploited foradvanced valleytronic and optoelectronic applications.

Valley-polarization and stable triplet exciton formation in 2D lateral heterostrcuture of hBN-kagome and graphene