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We show that rhombohedral four-layer graphene (4LG) nearly aligned with ahexagonal boron nitride (hBN) substrate often develops nearly flat isolated lowenergy bands with non-zero valley Chern numbers. The bandwidths of the isolatedflatbands are controllable through an electric field and twist angle, becomingas narrow as $\sim10~$meV for interlayer potential differences between top andbottom layers of $|\Delta|\approx 10\sim15~$meV and $\theta \sim 0.5^{\circ}$at the graphene and boron nitride interface. The local density of states (LDOS)analysis shows that the nearly flat band states are associated to the non-dimerlow energy sublattice sites at the top or bottom graphene layers and theirdegree of localization in the moire superlattice is strongly gate tunable,exhibiting at times large delocalization despite of the narrow bandwidth. Weverified that the first valence bands' valley Chern numbers are$C^{\nu=\pm1}_{V1} = \pm n$, proportional to layer number for $n$LG/BN systemsup to $n = 8$ rhombohedral multilayers.

Topological flat bands in rhombohedral tetralayer and multilayer graphene on hexagonal boron nitride moire superlattices