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A nonperturbative dynamical coupling approach based on tight-bindingmolecular dynamics is used to evaluate the electron-ion (electron-phonon)coupling parameter in irradiated semiconductors as a function of the electronictemperature up to ~25,000 K. The method accounts for arbitrary electronicdistribution function via the Boltzmann equation, enabling a comparativeanalysis of various models: fully equilibrium electronic distribution,band-resolved local equilibria (distinct temperatures and chemical potential ofelectrons in the valence and the conduction band), and a full nonequilibriumdistribution. It is demonstrated that the nonequilibrium produces theelectron-phonon coupling parameter different by at most ~35% from itsequilibrium counterpart for identical deposited energy density, allowing to usethe coupling parameter as a function of the single electronic equivalent (orkinetic) temperature. The following 14 semiconductors are studied here - groupIV: Si, Ge, SiC; group III-V: AlAs, AlP, GaP, GaAs, GaSb; oxides: ZnO, TiO2,Cu2O; layered PbI2; ZnS and B4C.

Electron-phonon coupling in semiconductors at high electronic temperatures