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Multiferroic tunnel junctions (MFTJs) based on two-dimensional (2D) van derWaals heterostructures with sharp and clean interfaces at the atomic scale arecrucial for applications in nanoscale multi-resistive logic memory devices. Therecently discovered sliding ferroelectricity in 2D van der Waals materials hasopened new avenues for ferroelectric-based devices. Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe$_3$GeTe$_2$/graphene/bilayer-$h$-BN/graphene/CrI$_3$ (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Green's function combined withdensity functional theory. We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI$_3$, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e., TMR (TER) up to $\sim$$3.36\times10^{4}$\%($\sim$$6.68\times10^{3}$\%) at a specific bias voltage. Furthermore, theperfect spin filtering and remarkable negative differential resistance effectsare evident in our MFTJs. We further discover that the TMR, TER, and spinpolarization ratio under an equilibrium state can be enhanced by theapplication of in-plane biaxial strain. This work shows that the gianttunneling resistance ratio, multiple resistance states, and excellentspin-polarized transport properties of sliding ferroelectric BBN-based MFTJsindicate its significant potential in nonvolatile memories.

Voltage-tunable giant nonvolatile multiple-state resistance in sliding-interlayer ferroelectric h-BN van der Waals multiferroic tunnel junction