English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The spin of an electron confined in semiconductor quantum dots is currently apromising candidate for quantum bit (qubit) implementations. Taking advantageof existing CMOS integration technologies, such devices can offer a platformfor large scale quantum computation. However, a quantum mechanical frameworkbridging a device's physical design and operational parameters to the qubitenergy space is lacking. Furthermore, the spin to charge coupling introduced byintrinsic or induced Spin-Orbit-Interaction (SOI) exposes the qubits to chargenoise compromising their coherence properties and inducing quantum gate errors.We present here a co-modelling framework for double quantum dot (DQD) devicesand their charge noise environment. We use a combination of an electrostaticpotential solver, full configuration interaction quantum mechanical methods andtwo-level-fluctuator models to study the quantum gate performance in realisticdevice designs and operation conditions. We utilize the developed modelstogether alongside the single electron solutions of the quantum dots tosimulate one- and two- qubit gates in the presence of charge noise. We find aninverse correlation between quantum gate errors and quantum dot confinementfrequencies. We calculate X-gate fidelities >97% in the simulated Si-MOSdevices at a typical TLF densities. We also find that exchange driven two-qubitSWAP gates show higher sensitivity to charge noise with fidelities down to 91%in the presence of the same density of TLFs. We further investigate the one-and two- qubit gate fidelities at different TLF densities. We find that giventhe small size of the quantum dots, sensitivity of a quantum gate to thedistance between the noise sources and the quantum dot creates a strongvariability in the quantum gate fidelities which can compromise the deviceyields in scaled qubit technologies.

Modelling semiconductor spin qubits and their charge noise environment for quantum gate fidelity estimation