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Recently, Ref. [1] reformulated magic-angle twisted bilayer graphene (MATBG)as a topological heavy fermion problem, and used this reformulation to providea deeper understanding for the correlated phases at integer fillings. In thiswork, we generalize this heavy-fermion paradigm to magic-angle twistedsymmetric trilayer graphene (MATSTG), and propose a low-energy $f-c-d$ modelthat reformulates MATSTG as heavy localized $f$ modes coupled to itineranttopological semimetalic $c$ modes and itinerant Dirac $d$ modes. Our $f-c-d$model well reproduces the single-particle band structure of MATSTG at lowenergies for displacement field $\mathcal{E}\in[0,300]$meV. By performingHartree-Fock calculations with the $f-c-d$ model for $\nu=0,-1,-2$ electronsper Moir\'e unit cell, we reproduce all the correlated ground states obtainfrom the previous numerical Hartree-Fock calculations with theBistritzer-MacDonald-type (BM-type) model, and we find additional newcorrelated ground states at high displacement field. Based on the numericalresults, we propose a simple rule for the ground states at high displacementfields by using the $f-c-d$ model, and provide analytical derivation for therule at charge neutrality. We also provide analytical symmetry arguments forthe (nearly-)degenerate energies of the high-$\mathcal{E}$ ground states at allthe integer fillings of interest, and make experimental predictions of whichcharge-neutral states are stabilized in magnetic fields. Our $f-c-d$ modelprovides a new perspective for understanding the correlated phenomena inMATSTG, suggesting that the heavy fermion paradigm of Ref. [1] should be thegeneric underpinning of correlated physics in multilayer moire graphenestructures.

Magic-Angle Twisted Symmetric Trilayer Graphene as Topological Heavy Fermion Problem