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We investigate the integer quantum Hall effect in Cd3As2 thin films underconditions of strong to moderate quantum confinement (thicknesses of 10 nm, 12nm, 15 nm). In all the films, we observe the integer quantum Hall effect in thespin-polarized lowest Landau level (filling factor {\nu} = 1) and atspin-degenerate higher index Landau levels with even filling factors ({\nu} =2,4,6). With increasing quantum confinement, we also observe a lifting of theLandau level spin degeneracy at {\nu} = 3, manifest as the emergence of ananomaly in the longitudinal and Hall resistivity. Tight-binding calculationsshow that the enhanced g-factor likely arises from a combination of quantumconfinement and corrections from nearby subbands. We also comment on themagnetic field induced transition from an insulator to a quantum Hall liquidwhen the chemical potential is near the charge neutrality point.

Integer quantum Hall effect and enhanced g-factor in quantum confined Cd3As2 films