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Two recent experiments from Cornell and Columbia have reportedinsulator-to-metal transitions in two-dimensional (2D) moir\'e transition metaldichalcogenides (mTMD) induced by doping around half-filling, where the systemis a Mott insulator. In the current work, we consider the temperature dependentresistivity of this metallic phase in the doped situation away fromhalf-filling, arguing that it arises from the strongly temperature dependent 2DFriedel oscillations (i.e. finite momentum screening) associated with randomquenched charged impurities, leading to the observed strongly increasinglinear-in-$T$ resistivity in the metallic phase. Our theory appears to accountfor the temperature-dependent metallic resistivity for doping aroundhalf-filling of the effective moir\'e TMD band, showing thattemperature-dependent screened Coulomb disorder is an essential ingredient ofdoped 2D mTMD physics.

Temperature dependent resistivity in the doped two dimensional metallic phase of mTMD bilayers