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A detailed high pressure investigation is carried out using x-raydiffraction, Raman spectroscopy and low temperature resistivity measurements onhexagonal ZrSe$_{2}$ having an excess of 3 at.\% Zr. Structural studies showthat the sample goes through a gradual structural transition from hexagonal tomonoclinic phase, with a mixed phase in the pressure range 5.9 GPa to 14.8 GPa.Presence of a minimum in the $c/a$ ratio in the hexagonal phase and a minimumin the full width half maximum of the $A_{1g}$ mode at about the same pressureindicates an electronic phase transition. The sample shows a metalliccharacteristic in its low temperature resistivity data at ambient pressure,which persist till about 5.1 GPa and can be related the presence of slightexcess Zr. At and above 7.3 GPa, the sample shows a metal to semiconductortransition with the opening of a very small band gap, which increases withpressure. The low temperature resistivity data show an upturn, which flattenswith an increase in pressure. The phenomenological analysis of the lowtemperature resistivity data indicates the presence of Kondo effect in thesample, which may be due to the excess Zr.

Structural and electronic phase transitions in Zr$_{1.03}$Se$_{2}$ at high pressure