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The valley degeneracy in Si qubit devices presents problems for their use inquantum information processing. It is possible to lift this degeneracy by usingthe Wiggle Well architecture, in which an oscillatory Ge concentration couplesthe valleys. This paper presents the basic theory of this phenomenon togetherwith model calculations using the empirical pseudopotential theory to obtainthe overall magnitude of this effect and its dependence on the wavelength ofthe concentration oscillations. We derive an important selection rule which canlimit the effectiveness of the Wiggle Well in certain circumstances.

Enhanced Valley Splitting in Si Layers with Oscillatory Ge Concentration