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We analyze the confinement of electronic surface states in a model of atopological insulator nanowire. Spin-momentum locking in the surface statesreduces unwanted backscattering in the presence of non-magnetic disorder and isknown to counteract localization for certain values of magnetic flux threadingthe wire. We show that intentional backscattering can be induced for a range ofconditions in the presence of a nanowire constriction. We propose a geometryfor a nanowire that involves two constrictions and show that these regions formeffective barriers that allow for the formation of a quantum dot. We analyzethe zero-temperature non-interacting electronic transport through the deviceusing the Landauer-B\"{u}ttiker approach and show how externally appliedmagnetic flux parallel to the nanowire and electrostatic gates can be used tocontrol the spectrum of the quantum dot and the electronic transport throughthe surface states of the model device.

Electronic confinement of surface states in a topological insulator nanowire