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We discuss the implications of a small indium content (3%) in a GaAs epilayeron the electron- and nuclear-spin relaxation due to enhanced quadrupolareffects induced by the strain. Using the weakly perturbative spin-noisespectroscopy, we study the electron-spin relaxation dynamics without explicitexcitation. The observed temperature dependence indicates the presence oflocalized states, which have an increased interaction with the surroundingnuclear spins. Time-resolved spin-noise spectroscopy is then applied to studythe relaxation dynamics of the optically pumped nuclear-spin system. It shows amulti-exponential decay with time components, ranging from several seconds tohundreds of seconds. Further, we provide a measurement of the local magneticfield acting between the nuclear spins and discover a strong contribution ofquadrupole effects. Finally, we apply the nuclear spin diffusion model, thatallows us to estimate the concentration of the localized carrier states and todetermine the nuclear spin diffusion constant characteristic for this system.

Unveiling the electron-nuclear spin dynamics in an n-doped InGaAs epilayer by spin noise spectroscopy