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We present a numerical macrospin model for harmonic voltage detection inmultilayer spintronic devices. The core of the computational backend is basedon the Landau-Lifshitz-Gilbert-Slonczewski equation, which combines highperformance with satisfactory, for large-scale applications, agreement with theexperimental results. We compare the simulations with the experimental findingsin Ta/CoFeB bilayer system for angular- and magnetic field-dependent resistancemeasurements, electrically detected magnetisation dynamics, and harmonic Hallvoltage detection. Using simulated scans of the selected system parameters suchas the polar angle $\theta$, magnetisation saturation($\mu_\textrm{0}M_\textrm{s}$) or uniaxial magnetic anisotropy ($K_\textrm{u}$)we show the resultant changes in the harmonic Hall voltage, demonstrating thedominating influence of the $\mu_\textrm{0}M_\textrm{s}$ on the first andsecond harmonics. In the spin-diode ferromagnetic resonance (SD-FMR) techniqueresonance method the ($\mu_\textrm{0}M_\textrm{s}$, $K_\textrm{u}$) parameterspace may be optimised numerically to obtain a set of viable curves that fitthe experimental data.

Numerical Model Of Harmonic Hall Voltage Detection For Spintronic Devices