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The mechanism underlying charge transport in strongly correlated quantumsystems, such as doped antiferromagnetic Mott insulators, remains poorlyunderstood. Here we study the expansion dynamics of an initially localized holeinside a two-dimensional (2D) Ising antiferromagnet at variable temperature.Using a combination of classical Monte Carlo and a truncated basis method, wereveal two dynamically distinct regimes: A spin-charge confined region below acritical temperature $T^*$, characterized by slow spreading, and a spin-chargedeconfined region above $T^*$, characterized by an unbounded diffusiveexpansion. The deconfinement temperature $T^*\approx 0.65 J_z$ we find isaround the N\'eel temperature $T_{\rm N} = 0.567 J_z$ of the Ising backgroundin 2D, but we expect $T^* < T_{\rm N}$ in higher dimensions. In both regimes wefind that the mobile hole does not thermalize with the Ising spin background onthe considered time scales, indicating weak effective coupling of spin- andcharge degrees of freedom. Our results can be qualitatively understood by aneffective parton model, and can be tested experimentally in state-of-the-artquantum gas microscopes.

Dynamical signatures of thermal spin-charge deconfinement in the doped Ising model