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The magnetization of a non-magnetic semiconductor by femtosecond light pulsesis crucial to achieve an all-optical control of the spin dynamics in materialsand to develop faster memory devices. However, the conditions for its detectionare largely unknown. In this work we identify the criteria for the observationof ultrafast magnetization and critically discuss the difficulties hinderingits experimental detection. We show that ultrafast magnetization of a nonmagnetic semiconductor can be observed in compounds with very localizedconduction band states and more delocalized valence bands, such as in the caseof a p-d charge transfer gap. By using constrained and time dependent densityfunctional theory simulations, we demonstrate that a transient ferrimagneticstate can be induced in diamagnetic semiconductor V2O5 via ultrafast pulses atrealistic fluences. The ferrimagnetic state has opposite magnetic moments onvanadium (conduction) and oxygen (valence) states. Our methodology outruns thecase of V2O5 as it identifies the key requirements for a computationalscreening of ultrafast magnetism in non-magnetic semiconductors.

Theory of ultrafast magnetization of non-magnetic semiconductors with localized conduction bands