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Large intrinsic anomalous Hall effect (AHE) originating in the Berrycurvature has attracted growing attention for potential applications. Recentlyproposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides anexcellent platform for controlling the intrinsic AHE because it only hosts aWeyl-points related band structure near the Fermi energy. Here we report thefabrication of EuCd$_2$Sb$_{\mathrm{2}}$ single-crystalline films and controlof their anomalous Hall effect by film technique. As also analyzed byfirst-principles calculations of energy-dependent intrinsic anomalous Hallconductivity, the obtained anomalous Hall effect shows a sharp peak as afunction of carrier density, demonstrating clear energy dependence of theintrinsic AHE.

Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films