English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In metal/degenerately doped silicon bilayer structure, the interfacialflexoelectric effect due to strain gradient leads to charge carrier transferfrom metal layer to the silicon layer. This excess charge carrier concentrationis called flexoelectronic doping or flexoelectronic charge transfer, whichgives rise to an electronically polarized (order of magnitude larger thanferroelectric materials) silicon layer. In the transport measurements, thecharge carrier concentration in silicon is found to increase by two orders ofmagnitude due to flexoelectronic doping, which changes the Fermi level and theHall response. The flexoelectronic charge accumulation modifies theelectron-electron and the electron phonon coupling, which gives rise to Mottmetal-insulator transition and magnetism of phonons, respectively. Thecoexistence of flexoelectronic polarization and magnetism gives rise to a newclass of materials called electronic multiferroics. By controlling theflexoelectronic doping, material behavior can potentially be engineered forquantum, spintronics and electronics applications in semiconductor materials.

Flexoelectronic doping of the degenerate silicon and the correlated electron behavior