English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

p-d hybridization of transition metal impurities in a semiconductor host isthe mechanism that couples valence-band electrons and localized spins. We usescanning tunneling microscopy and spectroscopy combined with density functionaltheory to probe at the atomic scale hybridization of Cr single impurities withGaAs host. Combining spatial density of states mapping and in-gap statesspectroscopy of the Cr substituted at the surface of the semiconductor, we givea detailed picture of the spatial extension and the electronic structure of thestrongly anisotropic wave function of Cr on GaAs(110). First principlescalculations allow to identify electronic character and origin of each statesand show that the main resonance peaks and the wave function with "drop-eyes"lobes experimentally observed for 3d metal impurities in III-V semiconductorare direct local evidences of the p-d hybridization.

Atomic scale visualization of the p-d hybridization in III-V semiconductors doped with transition metal impurities