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Strong spin-orbit coupling, the resulting large $g$ factor, and smalleffective mass make InAs an attractive material platform for inducingtopological superconductivity. The surface Fermi level pinning in theconduction band enables highly transparent ohmic contact without excessivedoping. We investigate electrostatically defined quantum point contacts (QPCs)in a deep-well InAs two-dimensional electron gas. Despite the 3.3% latticemismatch between the InAs quantum well and the InP substrate, we report cleanQPCs with up to eight pronounced quantized conductance plateaus at zeromagnetic field. Source-drain dc bias spectroscopy reveals a harmonicconfinement potential with a nearly $5$ meV subband spacing. We find amany-body exchange interaction enhancement for the out-of-plane $g$ factor$|g_{\perp}^*| = 27 \pm 1$, whereas the in-plane $g$ factor is isotropic$|g^*_{x}| = |g^*_{y}| = 12 \pm 2$, close to the bulk value for InAs.

Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate