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Multiferroic van der Waals (vdW) heterostrucutres offers an exciting routetowards novel nanoelectronics and spintronics device technology. Here weinvestigate the electronic and transport properties of multiferroic vdWheterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectricSc$_2$CO$_2$ monolayer using first-principles density functional theory andquantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$heterostructure can be reversibly switched from semiconducting to half-metallicbehavior by electrically modulating the ferroelectric polarization states ofSc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III brokengap band alignment, which can be beneficial for tunnelling field-effecttransistor application. We perform a quantum transport simulation, based on a\emph{proof-of-concept} two-terminal nanodevice, to demonstrateall-electric-controlled valving effects uniquely enabled by the nonvolatileferroelectric switching of the heterostructure. These findings unravels thepotential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block fordesigning a next generation of ultimately compact information processing, datastorage and spintronics devices.

Multiferroic van der Waals heterostructure FeCl$_2$/Sc$_2$CO$_2$: Nonvolatile electrically switchable electronic and spintronic properties