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The effect of 50\% Cu doping at the Au site in the topological Diracsemimetal CaAuAs is investigated through electronic band structurecalculations, electrical resistivity, and magnetotransport measurements.Electronic structure calculations a suggest broken-symmetry-driven topologicalphase transition from the Dirac to triple-point state in CaAuAs via alloyengineering. The electrical resistivity of both the CaAuAs andCaAu$_{0.5}$Cu$_{0.5}$As compounds shows metallic behavior. Nonsaturatingquasilinear magnetoresistance (MR) behavior is observed in CaAuAs. On the otherhand, MR of the doped compound shows a pronounced cusplike feature in thelow-field regime. Such behavior of MR in CaAu$_{0.5}$Cu$_{0.5}$As is attributedto the weak antilocalization (WAL) effect. The WAL effect is analyzed usingdifferent theoretical models, including the semiclassical $\sim\sqrt{B}$ onewhich accounts for the three-dimensional WAL and modified Hikami-Larkin-Nagaokamodel. Strong WAL effect is also observed in the longitudinal MR, which is welldescribed by the generalized Altshuler-Aronov model. Our study suggests thatthe WAL effect originates from weak disorder and the spin-orbit coupled bulkstate. Interestingly, we have also observed the signature of chiral anomaly inlongitudinal MR, when both current and field are applied along the $c$ axis.The Hall resistivity measurements indicate that the charge conduction mechanismin these compounds is dominated by the holes with a concentration$\sim$10$^{20}$ cm$^{-3}$ and mobility $\sim 10^2$ cm$^2$ V$^{-1}$ S$^{-1}$.

Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs