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We investigate the effect of ellipticity ratio of the polarized radiationfield on optoelectronic properties of a two-dimensional (2D) semi-Dirac (SD)system. The optical conductivity is calculated within the energy balanceequation approach derived from the semiclassical Boltzmann equation. We findthat there exists the anisotropic optical absorption induced via both theintra- and interband electronic transition channels in the perpendicular $xx$and $yy$ directions. Furthermore, we examine the effects of the ellipticityratio, the temperature, the carrier density, and the band-gap parameter on theoptical conductivity of the 2D SD system placed in transverse and verticaldirections, respectively. It is shown that the ellipticity ratio, temperature,carrier density, and band-gap parameter can play the important roles in tuningthe strength, peak position, and shape of the optical conductivity spectrum.The results obtained from this study indicate that the 2D SD system can be apromising anisotropic and tunable optical and optoelectronic material forapplications in innovative 2D optical and optoelectronic devices, which areactive in the infrared and terahertz bandwidths.

Anisotropic and tunable optical conductivity of a two-dimensional semi-Dirac system in the presence of elliptically polarized radiation