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Valley degree of freedom besides spin is a promising candidate as a carrierof information. Spintronics has come a long way and spin modulation can berealized by quantum interference and spin-orbit coupling effect. However, thecontrol of valley degree of freedom using quantum interference is still aproblem to be explored. Here we discover a mechanism of producing valleypolarization in a monolayer transition metal dichalcogenides nanoribbon withattached stubs, in which valley-resolved Fano resonance are formed due to thequantum interference of intervalley backscattering. When the quantuminterference occurs between the localized states at the edge of the stubs andthe continuous channels in the nanoribbon, the transmission dips of Fano effectis valley-polarized. As the number of stubs increases, the valley-polarizedtransmission dips will split and valley-resolved minigaps are formed by Fanoresonance with intervalley backscattering in stub superlattice. When theelectron incident energy is in these valley-resolved gaps of the superlattice,even with several stubs, the transmission can have a significant valleypolarization. Our finding points to an opportunity to realize valleyfunctionalities by quantum interference.

Valley-resolved Fano resonance in monolayer transition metal dichalcogenides nanoribbons with attached stubs