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We develop a minimal theory for the recently observed metal-insulatortransition (MIT) in two-dimensional (2D) moir\'e multilayer transition metaldichalcogenides (mTMD) using Coulomb disorder in the environment as theunderlying mechanism. In particular, carrier scattering by random chargedimpurities leads to an effective 2D MIT approximately controlled by theIoffe-Regel criterion, which is qualitatively consistent with the experiments.We find the necessary disorder to be around $5$-$10\times10^{10}$cm$^{-2}$random charged impurities in order to quantitatively explain much, but not all,of the observed MIT phenomenology as reported by two different experimentalgroups. Our estimate is consistent with the known disorder content in TMDs.

Disorder induced 2D metal-insulator transition in moir\'e transition metal dichalcogenide multilayers