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High quality thin films of the topological insulator(Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ have been deposited on SrTiO$_3$ (111) bymolecular beam epitaxy. Their electronic structure was investigated by in situangle-resolved photoemission spectroscopy and in situ scanning tunnelingspectroscopy. The experimental results reveal striking similarities withrelativistic ab-initio tight binding calculations. We find that ultrathin slabsof the three-dimensional topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$display topological surface states, surface states with large weight on theoutermost Te atomic layer, and dispersive bulk energy levels that arequantized. We observe that the bandwidth of the bulk levels is stronglyreduced. These bunched bulk states as well as the surface states give rise tostrong peaks in the local density of states.

Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi$_{0.4}$Sb$_{0.6}$)$_2$Te$_3$ thin films