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Electron valleys in transition-metal dichalcogenide monolayers drive novelphysics and allow designing multifunctional architectures for applications. Wepropose to manipulate the electron valleys in these systems for spin/valleyfilter and valve devices through band engineering. Instead of the magneticproximity effect that has been extensively used in previous studies, in ourstrategy, the electron valleys are directly coupled to the spin-polarizedstates of the two-dimensional ferromagnets. We find that this coupling resultsin a valley-selective gap opening due to the spin-momentum locking in thetransition-metal dichalcogenide monolayers. This physics gives rise to avariety of unexpected electronic properties and phenomena includinghalfmetallicity, electrically switchable valley polarization, spin/valleyfilter and valve effects in the transition-metal dichalcogenide monolayers. Wefurther demonstrate our idea in MoTe$_2$/CoCl$_2$ andCoCl$_2$/MoTe$_2$/CoCl$_2$ van der Waals heterojunctions based onfirst-principles calculations. Thus, our study provides a way of engineeringthe electron valleys in transition-metal dichalcogenide monolayers fornew-concept devices.

physical review. b./physical review. b

Electrically switchable valley polarization, spin/valley filter, and  valve effects in transition-metal dichalcogenide monolayers interfaced with  two-dimensional ferromagnetic semiconductors