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The tunnel magnetoresistance (TMR) is one of the most important spintronicphenomena but its reduction at finite temperature is a severe drawback forapplications. Here, we reveal a crucial determinant of the drawback, that is,the $s$-$d$ exchange interaction between conduction $s$ and localized $d$electrons at interfacial ferromagnetic layers. By calculating the temperaturedependence of the TMR ratio in Fe/MgO/Fe(001), we show that the obtained TMRratio significantly decreases with increasing temperature owing to thespin-flip scattering in the $\Delta_1$ state induced by the $s$-$d$ exchangeinteraction. The material dependence of the coupling constant $J_{sd}$ is alsodiscussed on the basis of a nonempirical method.

Crucial role of interfacial $s$-$d$ exchange interaction in the temperature dependence of tunnel magnetoresistance