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Based on the first-principles calculations, we study the electron-phononscattering effect on the resistivity in the zirconium dichalcogenides,$\text{Zr}_{}\text{S}_{2}$ and $\text{Zr}_{}\text{Se}_{2}$, whose electronicband structures possess multiple valleys at conduction band minimum. Thecomputed resistivity exhibits non-linear temperature dependence, especially for$\text{Zr}_{}\text{S}_{2}$, which is also experimentally observed on some TMDCssuch as $\text{Ti}_{}\text{S}_{2}$ and $\text{Zr}_{}\text{Se}_{2}$. Byperforming the decomposition of the contributions of scattering processes, wefind that the intra-valley scattering by acoustic phonons mainly contributes tothe resistivity around 50 K. Moreover, the contribution of the intra-valleyscattering by optical phonons becomes dominant even above 80 K, which is asufficiently low temperature compared with their frequencies. By contrast, theeffect of the inter-valley scattering is found to be not significant. Our studyidentifies the characteristic scattering channels in the resistivity of thezirconium dichalcogenides, which provides critical knowledge to microscopicallyunderstand electron transport in systems with multi-valley band structure.

physical review. b./physical review. b

First-principles study on the electrical resistivity in zirconium  dichalcogenides with multi-valley bands: mode-resolved analysis of  electron-phonon scattering