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By using the tight-binding model and non-equilibrium Green's function method(NEGF), we study the band structures and transport properties of a silicenenanoribbon with a line defect where a bulk energy gap is opened due to thesublattice symmetry breaking. The flat subband bends downwards or upwards dueto the effect of the line defect. The spin-orbit coupling induces quantum spinHall states. Especially, the energy band depends on the distance between theline defect and the edge of the nanoribbon. The effects of the on-site energieson the band spectra of the two defect configurations are different. Therealways exists one band gap for different on-site energies for the defectconfiguration of case 1. However, a gapless state and a band gap can bemodulated by changing the on-site energy, the sublattice potential andspin-orbit couplings for the defect configuration of case 2. Accordingly, thevariation trends of the conductance including zero conductance can be wellunderstood in terms of the combined effect of the sublattice potential, theon-site energy and spin-orbit couplings on the band structures. Thus it is easyand effective to modulate the transport property of the silicene nanoribbonwith the defect configuration of case 2 by utilizing the sublattice potential,the on-site energy and spin-orbit couplings. This study is of greatsignificance for the fabrication and the modulation of the transport propertyof silicene-based devices.

Role of line defect in the bandgap and transport properties of silicene nanoribbons