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Inverted-gap GaSb/InAs quantum wells have long been predicted to show quantumspin Hall insulator (QSHI) behavior. The experimental characterization of theQSHI phase in these systems has relied on the presence of quantized edgetransport near charge neutrality. However, experimental data showing thepresence of edge conductance in the \emph{trivial} regime suggest thatadditional experimental signatures are needed to characterize the QSHI phase.Here we show that electric field- induced gap oscillations can be used as anindicator of the presence of helical edge states in system. By studying arealistic low-energy model GaSb/InAs quantum wells derived from $k \cdot p$band theory, we show that such oscillations are bound to appear in narrowsamples as the system is driven to the the the topological phase by theelectric field. Our results can serve as a guide for the search of additionalexperimental signatures of the presence of topologically-protected helical edgestates in GaSb/InAs systems.

Electric field-induced edge state oscillations in GaSb/InAs quantum wells