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Transition metal dichalcogenide heterostructures can host interlayer excitons(IXs), which consist of electrons and holes spatially separated in differentlayers. IXs possess permanent dipoles and have proven to offer a wealth ofnovel physics. We develop a discrete, random-walk model which includesannihilation and repulsion interactions among IXs. Using this model, wesimulate the trapping of IXs in traps of different depths, densities, andshapes. Our results show that dipole-dipole interactions play an important rolein regulating IX trapping. The effects of dipole interactions can be mitigatedwith small, deep traps which are realizable with atomic defects and moirepotentials.

Trapping Interlayer Excitons in van der Waals Heterostructures by Potential Arrays