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We studied flux pinning in exfoliated FeTe$_{0.6}$Se$_{0.4}$ thin-filmdevices with a thickness $d$ from 30 to 150 nm by measuring the criticalcurrent density $J_{\mathrm{c}}$. In bulk FeTe$_{0.6}$Se$_{0.4}$, the fluxpinning has been discussed in the framework of weak collective pinning, whilethere is little knowledge on the pinning mechanism in the thin-film region.From the thickness $d$ dependence of $J_{\mathrm{c}}$ at a fixed magnetic fieldof 1 T, we found that the strong pinning is dominant below $d \approx 70$ nm,while the weak collective pinning becomes more important above $d \approx 100$nm. This crossover thickness can be explained by the theoretical model proposedby van der Beek $\textit{et al}$ [Phys. Rev. B. ${\bf 66}$, 024523 (2002)].

Thickness-induced crossover from strong to weak collective pinning in exfoliated FeTe$_{0.6}$Se$_{0.4}$ thin films at 1 T