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Silicon (Si) donors in GaAs have been the topic of extensive studies since Siis the most common and well understood n-type dopant in III-V semiconductordevices and substrates. The indirect bandgap of AlAs compared to the direct oneof GaAs leads to interesting effects when introducing Si dopants. Here wepresent a study of cross-sectional scanning tunneling microscopy (X-STM) anddensity functional theory (DFT) calculations to study Si donors in AlAs at theatomic scale. Based on their crystal symmetry and contrast strengths, weidentify Si donors up to four layers below the (110) surface of AlAs.Interestingly, their short-range local density of states (LDOS) is very similarto Si atoms in the (110) surface of GaAs. Additionally we show high-resolutionimages of Si donors in all these layers. For empty state imaging, theexperimental and simulated STM images based on DFT show excellent agreement forSi donor up to two layers below the surface.

An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory