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Hole spin qubits in planar Ge heterostructures are one of the frontrunnerplatforms for scalable quantum computers. In these systems, the spin-orbitinteractions permit efficient all-electric qubit control. We propose a minimaldesign modification of planar devices that enhances these interactions byorders of magnitude and enables low power ultrafast qubit operations in the GHzrange. Our approach is based on an asymmetric potential that strongly squeezesthe quantum dot in one direction. This confinement-induced spin-orbitinteraction does not rely on microscopic details of the device such as growthdirection or strain, and could be turned on and off on demand instate-of-the-art qubits.

Squeezed hole spin qubits in Ge quantum dots with ultrafast gates at low power