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GaAs/AlGaAs quantum well (QW) system is utilized to investigate the electronspin relaxation in the satellite X-valley of indirect band gap Al0.63Ga0.37Asepitaxial layers through polarization resolved photo-luminescence excitationspectroscopy. Solving the rate equations, steady state electronic distributionin various valleys of AlxGa1-xAs is estimated against continues photo carriergeneration and an expression for the degree of circular polarization (DCP) ofphotoluminescence coming from the adjacent quantum well (QW) is derived.Amalgamating the experimental results with analytical expressions, the X-valleyelectron spin relaxation time ({\tau}_S^X) is determined to be 2.7 +/- 0.1 psat 10 K. To crosscheck its validity, theoretical calculations are performedbased on Density Functional Theory within the framework of the projectoraugmented wave method, which support the experimental result quite well.Further, temperature dependence of {\tau}_S^X is studied over 10-80 K range,which is explained by considering the intra-valley scattering of carriers inthe X-valley of indirect band gap AlGaAs barrier layer. It is learnt that thestrain induced modification of band structure lifts the degeneracy in X-valley,which dominates the electron spin relaxation beyond 50 K. Furthermore, the DCPspectra of hot electrons in indirect band gap AlGaAs layers is found to besignificantly different compared to that of direct bandgap AlGaAs. It isunderstood as a consequence of linear k dependent Dresselhaus spin splittingand faster energy relaxation procedure in the X-valley. Findings of this workcould provide a new horizon for the realization of next generationspin-photonic devices which are less sensitive to Joule heating.

Electron spin relaxation in X-valley of indirect bandgap AlxGa1-xAs: A new horizon for the realization of next generation spin-photonic devices