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This study investigated the electronic structure of SrTi$_{1-x}$V$_x$O$_3$(STVO) thin films, which are solid solutions of strongly correlated transparentconductive oxide (TCO) SrVO$_3$ and oxide semiconductor SrTiO$_3$, using ${insitu}$ photoemission spectroscopy. STVO is one of the most promising candidatesfor correlated-metal TCO because it has the capability of optimizing theperformance of transparent electrodes by varying ${x}$. Systematic andsignificant spectral changes were found near the Fermi level (${E_{\rm F}}$) asa function of ${x}$, while the overall electronic structure of STVO is in goodagreement with the prediction of band structure calculations. As ${x}$decreases from 1.0, spectral weight transfer occurs from the coherent band near${E_{\rm F}}$ to the incoherent states (lower Hubbard band) around 1.0-1.5 eV.Simultaneously, a pseudogap is formed at ${E_{\rm F}}$, indicating asignificant reduction in quasiparticle spectral weight within close vicinity of${E_{\rm F}}$. This pseudogap seems to evolve into an energy gap at ${x}$ =0.4, suggesting the occurrence of a composition-driven metal-insulatortransition. From angle-resolved photoemission spectroscopic results, thecarrier concentration ${n}$ changes proportionally as a function of ${x}$ inthe metallic range of ${x}$ = 0.6-1.0. In contrast, the mass enhancementfactor, which is proportional to the effective mass (${m^*}$), does not changesignificantly with varying ${x}$. These results suggest that the key factor of${n/m^*}$ in optimizing the performance of correlated-metal TCO is tuned by${x}$, highlighting the potential of STVO to achieve the desired TCOperformance in the metallic region.

physical review. b./physical review. b

Electronic structure of SrTi$_{1-x}$V$_x$O$_3$ films studied by ${\it  in\ situ}$ photoemission spectroscopy: Screening for a transparent electrode  material