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Motivated by the recent synthesis of two-dimensional monolayer AlSb, wetheoretically investigate its ground state and electronic properties using thefirst-principles calculations coupled with Bethe-Salpeter equation. Anexcitonic instability is revealed as a result of larger exciton binding energythan the corresponding one-electron energy gap by $\sim$0.1 eV, which is anindicative of a many-body ground state accompanied by spontaneous excitongeneration. Including the spin-orbit coupling is proven to be a must tocorrectly predict the ground state. At room temperature, the two-dimensionalmonolayer AlSb is a direct gap semiconductor with phonon-limited electron andhole mobilities both around 1700 cm$^2$/V$\cdot$s. These results show thatmonolayer AlSb may provide a promising platform for realization of theexcitonic insulator and for applications in the next-generation electronicdevices.

Excitonic Instability and Electronic Property of Two-dimensional AlSb Limit