English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Intrinsic magnetic topological insulators (MTIs) MnBi2Te4 andMnBi2Te4/(Bi2Te3)n are expected to realize the high-temperature quantumanomalous Hall effect (QAHE) and dissipationless electrical transport.Extensive efforts have been made on this field but there is still lack of idealMTI candidate with magnetic ordering of ferromagnetic (FM) ground state. Here,we demonstrate a MTI sample of Mn(Bi0.7Sb0.3)4Te7 which holds the coexistenceof FM ground state and topological non-triviality. The dramatic modulation ofthe magnetism is induced by a charge carrier engineering process by the way ofSb substitution in MnBi4Te7 matrix with AFM ordering. The evolution ofmagnetism in Mn(Bi1-xSbx)4Te7 is systematically investigated by magneticmeasurements and theoretical calculations. The clear topological surface statesof the FM sample of x = 0.3 are also verified by angle-resolved photoemissionspectra. We also aware that the FM sample of x = 0.3 is close to the chargeneutral point. Therefore, the demonstration of intrinsic FM-MTI ofMn(Bi0.7Sb0.3)4Te7 in this work sheds light to the further studies of QAHErealization and optimizations.

Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in intrinsic magnetic topological insulator MnBi4Te7