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Few-femtosecond extreme ultraviolet (XUV) transient absorption spectroscopy,performed with optical 500-1000 nm supercontinuum and broadband XUV pulses(30-50 eV), simultaneously probes dynamics of photoexcited carriers in WS$_{2}$at the W O$_3$ edge (37-45 eV) and carrier-induced modifications ofcore-exciton absorption at the W N$_{6,7}$ edge (32-37 eV). Access tocontinuous core-to-conduction band absorption features and discretecore-exciton transitions in the same XUV spectral region in a semiconductorprovides a novel means to investigate the effect of carrier excitation oncore-exciton dynamics. The core-level transient absorption spectra, measuredwith either pulse arriving first to explore both core-level and valence carrierdynamics, reveal that core-exciton transitions are strongly influenced by thephotoexcited carriers. A $1.2\pm0.3$ ps hole-phonon relaxation time and a$3.1\pm0.4$ ps carrier recombination time are extracted from the XUV transientabsorption spectra from the core-to-conduction band transitions at the WO$_{3}$ edge. Global fitting of the transient absorption signal at the WN$_{6,7}$ edge yields $\sim 10$ fs coherence lifetimes of core-exciton statesand reveals that the photoexcited carriers, which alter the electronicscreening and band filling, are the dominant contributor to the spectralmodifications of core-excitons and direct field-induced changes play a minorrole. This work provides a first look at the modulations of core-exciton statesby photoexcited carriers and advances our understanding of carrier dynamics inmetal dichalcogenides.

Coupled Valence Carrier and Core-Exciton Dynamics in WS$_{2}$ Probed by Few-Femtosecond Extreme Ultraviolet Transient Absorption Spectroscopy