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The list of semiconductor materials with spectroscopically fingerprintedself-interstitials is very short. The M-center in 4H-SiC, a bistable defectresponsible for a family of electron traps, has been deprived of a model whichcould unveil its real importance for almost two decades. Using advancedfirst-principles calculations and junction spectroscopy, we demonstrate thatthe properties of M, including bistability, annealing, reconfigurationkinetics, and electronic levels, match those of the carbon self-interstitial.

The M-center in 4H-SiC is a carbon self-interstitial