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The interlayer antiferromagnetic coupling hinders the observation of quantumanomalous Hall effect in magnetic topological insulator MnBi$_2$Te$_4$. Wedemonstrate that interlayer \textit{ferromagnetism} can be established byutilizing the \textit{p}-doping method in MnBi$_2$Te$_4$ multilayers. In twoseptuple-layers system, the interlayer ferromagnetic coupling appears by dopingnonmagnetic elements (e.g., N, P, As, Na, Mg, K, and Ca), due to theredistribution of orbital occupations of Mn. We further find that Mg and Caelements are the most suitable candidates because of their low formationenergy. Although, the \textit{p}-doped two septuple layers exhibittopologically trivial band structure, the increase of layer thickness to three(four) septuple layers with Ca (Mg) dopants leads to the formation of thequantum anomalous Hall effect. Our proposed \textit{p}-doping strategy not onlymakes MnBi$_2$Te$_4$ become an ideal platform to realize the high-temperaturequantum anomalous Hall effect without external magnetic field, but also cancompensate the electrons from the intrinsic \textit{n}-type defects inMnBi$_2$Te$_4$.

Interlayer Ferromagnetism and High-Temperature Quantum Anomalous Hall Effect in \textit{p}-Doped MnBi$_2$Te$_4$ Multilayers