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We obtain an analytical expression for the linewidth of the 1s-exciton as afunction of temperature in transition metal dichalcogenides. The totallinewidth, as function of temperature, is dominated by three contributions: (i)the radiative decay (essentially temperature independent); (ii) thephonon-induced intravalley scattering; (iii) the phonon-induced intervalleyscattering. Our approach uses a variational \emph{Ansatz} to solve the Wannierequation allowing for an analytical treatment of the excitonic problem,including rates of the decay dynamics. Our results are in good agreement withexperimental data already present in the literature and can be used to readilypredict the value of the total linewidth at any temperature in the broad classof excitonic two-dimensional materials.

Analytical description of the 1s exciton linewidth temperature-dependence in transition metal dichalcogenides