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Antiferromagnetic thin films typically exhibit a multi-domain state, andcontrol of the antiferromagnetic N\'eel vector is challenging asantiferromagnetic materials are robust to magnetic perturbations. By relying onanisotropic in-plane strain engineering of epitaxial thin films of theprototypical antiferromagnetic material LaFeO3, uniaxial N\'eel vector controlis demonstrated. Orthorhombic (011)- and (101)-oriented DyScO3, GdScO3 andNdGaO3 substrates are used to engineer different anisotropic in-plane strainstates. The anisotropic in-plane strain stabilises structurally monodomainmonoclinic LaFeO3 thin films. The uniaxial N\'eel vector is found along thetensile strained b axis, contrary to bulk LaFeO3 having the N\'eel vector alongthe shorter a axis, and no magnetic domains are found. Hence, anisotropicstrain engineering is a viable tool for designing unique functional responses,further enabling antiferromagnetic materials for mesoscopic device technology.

Uniaxial N\'eel Vector Control in Perovskite Oxide Thin Films by Anisotropic Strain Engineering