English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

We use magneto-conductivity to study the magnetic proximity effect on surfacestates of doped topological insulators. Our bilayers consist of a layer ofFe$_7$Se$_8$, which is a metallic ferrimagnet and a layer ofBi$_{0.8}$Sb$_{1.2}$Te$_{3}$ which is a highly hole-doped topologicalinsulator. Using transport measurements and a modified Hikami-Larkin-Nagaokamodel, we show that the ferromagnet shortens significantly the effectivecoherence length of the surface states, suggesting that a gap is opened at theDirac point. We show that the magnetically induced gap persists on surfacestates which are separated from the magnet by a topological insulator layer asthick as 170 [nm]. Furthermore, the size of the gap is found to be proportionalto the magnetization that we extract from the anomalous Hall effect.  Our results give information on the ties between carrier density, inducedmagnetization and magnetically induced gap in topological insulator/ferromagnetbilayers. This information is important both for a theoretical understanding ofmagnetic interactions in topological insulators and for the practicalfabrication of such bilayers, which are the basis of various suggestedtechnologies, such as spintronic devices, far infra-red detectors etc.

Carrier Density and Thickness Dependent Proximity Effect in Doped Topological Insulator -- Metallic Ferromagnet Bilayers