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Despite extensive study, fundamental understanding of self-organizedpatterning by broad-beam ion bombardment is still incomplete and controversial.Understanding the nanopatterning of elemental semiconductors, particularlysilicon, is both foundational for the broader field and of intrinsic scientificand technological interest itself. This is the second component of a two-partinvestigation of the kinetics and fluctuation dynamics of self-organizednanoscale ripple development on silicon during 1 keV Ar$^+$ (Part I) and Kr$^+$bombardment. Here, it's found that the ion-enhanced viscous flow relaxation isessentially equal for Kr$^+$-induced patterning as previously found for Ar$^+$patterning. The magnitude of the surface curvature dependent roughening rate inthe early stage kinetics is larger for Kr$^+$ than for Ar$^+$, qualitativelyconsistent with expectations for erosive and mass redistributive contributionsto the initial surface instability. As with the Ar$^+$ case, fluctuationdynamics in the late stage show a peak in correlation time at the length scalecorresponding to the dominant structural feature on the surface -- the ripples.Analogy is made to the phenomenon of de Gennes narrowing in liquids, butsignificant differences are also pointed out. Finally, it's shown that specklemotion during the surface evolution can be analyzed to determine spatialinhomogeneities in erosion rate and ripple velocity on the surface. This allowsthe direction and speed of ripple motion to be measured in real time, a uniquecapability for measuring these fundamental parameters outside the specializedenvironment of FIB/SEM systems.

Nanoscale dynamics during self-organized ion beam patterning of Si: II. Kr$^+$ Bombardment