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We have investigated charge and spin transport in n-type metallic GaAsnanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy(HVPE) on Si substrates. This was done by exciting the nanowire bytightly-focussed circularly-polarized light and by monitoring the intensity andcircular polarization spectrum as a function of distance from the excitationspot. The spin-polarized photoelectrons give rise to a well-defined feature inthe nearbandgap spectrum, distinct from the main line due to recombination ofthe spin-unpolarized electrons of the Fermi sea with the same minorityphotoholes. At a distance of 2 (micro)m, only the main line remains, implyingthat photoelectrons have reached a charge thermodynamic equilibrium with theFermi sea. However, although no line is present in the intensity spectrum atthe corresponding energy, the circular polarization is still observed at thesame energy in the spectrum, implying that photoelectrons have preserved theirspin orientation and that the two spin reservoirs remain distinct.Investigations as a function of distance to the excitation spot show that,depending on excitation power, a photoelectron spin polarization of 20% can betransported over a record distance of more than 20 (micro)m. This finding haspotential applications for long distance spin transport in n-type dopednanowires.

Charge and spin transport over record distances in GaAs metallic n-type nanowires : I photocarrier transport in a dense Fermi sea